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Military Standards Specification Testing

About MIL Standards

Military standards are the foundation of almost all quality, reliability, and testing specifications used in the electronics industry today. Knowledge and understanding of industry practices can be unattainable without a thorough comprehension of the underlying military documents (especially since some industry specs are just re-packaged military specs). However, the long delays between revisions and the increasing relevance of commercial specifications, even for high-reliability, harsh environments, can make blind allegiance to military specifications costly and potentially disastrous.

DfR has a unique capability, through our comprehensive knowledge of industry best practices and our physics-of-failure based approach to reliability assurance, to understand which test methods are most relevant to your component’s or product’s requirements.

At DfR, test methods are not called out in a blanket fashion nor applied as unalterable routines, but are selected and tailored to generate the most relevant test data possible.

For a large number of our customers, we have developed qualification plans that incorporate only the most appropriate test methods and then review and modify those test methods to provide the quality and reliability required while minimizing the time and resources expended.

DfR is experienced in providing testing and analysis as per MIL-STD-202G, MIL-STD-750E, MIL-STD-883G, and MIL-STD-810F[c2]. The first three standards are designed to provide test methods for passive, discrete, and active components, respectively. The first three standards are also managed and controlled by the Defense Supply Center, Columbus (DSCC), an activity under the Defense Logistics Agency, which is the supplier to the military for spare parts (over $2 billion in annual sales). The fourth standard, MIL-STD-810F, provides test methods for sub-system (circuit card assemblies) and system level, and is controlled and managed by the U.S. Army Developmental Test Command.

As a quick aside, notice anything missing? That’s right: Printed Circuit Boards. The military standard for PCBs was canceled in 1984 and nothing has replaced it. Don’t worry; DfR can help you here too.

Standards

MIL-STD-202G, Test Method Standard, Electronic and Electrical Component Parts

This standard establishes methods for testing electronic and electrical component parts (i.e., capacitors, resistors, switches, relays, transformers, and jacks). The tests described are not to be interpreted as a conclusive representation of actual service operation, since the only true test for operation is an actual service test at that location. The standard includes:

  • Basic environmental tests
  • Physical and electrical tests

Environmental Tests

  • Method 101: Salt Atmosphere (Corrosion) (Formerly Salt Spray [Corrosion]).
  • Method 103: Humidity (Steady State).
  • Method 104: Immersion.
  • Method 105: Barometric Pressure (Reduced).
  • Method 106: Moisture Resistance.
  • Method 107: Thermal Shock.
  • Method 108: Life (at Elevated Ambient Temperature).
  • Method 109: Explosion.
  • Method 110: Sand and Dust.
  • Method 111: Flammability (External Flame).
  • Method 112: Seal.

Physical Characteristics Tests

  • Method 201: Vibration.
  • Method 203: Random Drop.
  • Method 204: Vibration, High Frequency.
  • Method 206: Life (Rotational).
  • Method 207: High-Impact Shock.
  • Method 208: Solderability.
  • Method 209: Radiographic Inspection.
  • Method 210: Resistance to Soldering Heat.
  • Method 211: Terminal Strength.
  • Method 212: Acceleration.
  • Method 213: Shock (Specified Pulse).
  • Method 214: Random Vibration.
  • Method 215: Resistance to Solvents.
  • Method 216: Resistance to Solder Wave Heat.
  • Method 217: Particle Impact Noise Detection (PIND).

Electrical Characteristics Tests

  • Method 301: Dielectric Withstanding Voltage.
  • Method 302: Insulation Resistance.
  • Method 303: DC Resistance.
  • Method 304: Resistance-Temperature Characteristic.
  • Method 305: Capacitance.
  • Method 306: Quality Factor (Q).
  • Method 307: Contact Resistance.
  • Method 308: Current-Noise Test for Fixed Resistors.
  • Method 309: Voltage Coefficient of Resistance Determination Procedure.
  • Method 310: Contact-Chatter Monitoring.
  • Method 311: Life: Low Level Switching.
  • Method 312: Intermediate Current Switching.

MIL-STD-750E, Test Method Standard, Test Methods for Semiconductor Devices

This standard establishes methods for testing semiconductor devices (i.e., transistors, diodes, voltage regulators, rectifiers, and tunnel diodes). The standard includes:

  • Basic environmental tests
  • Physical and electrical tests

Environmental Tests

  • Method 1001: Barometric Pressure.
  • Method 1011: Immersion.
  • Method 1015: Irradiation Procedure.
  • Method 1016: Insulation Resistance.
  • Method 1017: Neutron Irradiation.
  • Method 1018: Internal Water Vapor.
  • Method 1019: Steady State Irradiation.
  • Method 1020: ESD.
  • Method 1021: Moisture Resistance.
  • Method 1022: Resistance to Solvents.
  • Method 1026: Steady state operation life.
  • Method 1027: Steady state operation life.
  • Method 1031: High temp life (non-operating).
  • Method 1032: High temp life (non-operating).
  • Method 1036: Intermittent operation life.
  • Method 1037: Intermittent operation life.
  • Method 1038: Burn-in (diodes.
  • Method 1039: Burn-in (transistors).
  • Method 1040: Burn-in (thyristors).
  • Method 1041: Salt atmosphere.
  • Method 1042: Burn-in and life test (MOSFET).
  • Method 1046: Salt spray.
  • Method 1048: Blocking life.
  • Method 1049: Blocking life.
  • Method 1051: Temp cycling (air to air).
  • Method 1054: Potted environment.
  • Method 1055: Mission temp cycle.
  • Method 1056: Thermal shock.
  • Method 1061: Temperature measurement.
  • Method 1066: Dew point.
  • Method 1071: Hermetic seal.

Mechanical Characteristics Tests

  • Method 2005: Axial lead test.
  • Method 2006: Constant acceleration.
  • Method 2016: Shock.
  • Method 2017: Die attach.
  • Method 2026: Solderability.
  • Method 2031: Soldering heat.
  • Method 2036: Terminal strength.
  • Method 2037: Bond strength.
  • Method 2046: Vibration fatigue.
  • Method 2051: Vibration noise.
  • Method 2052: PIND.
  • Method 2056: Vibration, variable frequency.
  • Method 2057: Vibration, variable frequency.
  • Method 2066: Physical dimensions.
  • Method 2068: External visual.
  • Method 2069: Pre-cap visual, power MOSFET.
  • Method 2070: Pre-cap visual, discrete.
  • Method 2071: Visual and mechanical exam.
  • Method 2072: Internal visual inspection.
  • Method 2073: Visual inspection of die.
  • Method 2074: Internal visual inspection (diodes).
  • Method 2075: Decap internal visual.
  • Method 2076: Radiography.
  • Method 2077: SEM inspection.
  • Method 2081: Forward instability, shock.
  • Method 2082: Backward instability, vibration.
  • Method 2101: DPA for diodes.

Electrical Characteristics Tests for Bipolar Transistors

  • Method 3001: Breakdown, collector to base.
  • Method 3005: Burnout by pulsing.
  • Method 3011: Breakdown, collector to emitter.
  • Method 3015: Drift.
  • Method 3020: Floating potential.
  • Method 3026: Breakdown, emitter to base.
  • Method 3030: Collector to emitter, voltage.
  • Method 3036: Collector to base, cutoff current.
  • Method 3041: Collector to emitter, cutoff current.
  • Method 3051: Safe operating area (continuous).
  • Method 3052: Safe operating area (pulsed).
  • Method 3053: Safe operating area (switching).
  • Method 3061: Emitter to base, cutoff current.
  • Method 3066: Base to emitter voltage.
  • Method 3071: Saturation voltage and resistance.
  • Method 3076: Forward-current transfer ratio.
  • Method 3086: Static input resistance.
  • Method 3092: Static transconductance.

Circuit Performance and Thermal Resistance Measurements

  • Method 3101: Thermal impedance, diodes.
  • Method 3103: Thermal impedance, IGBTs.
  • Method 3104: Thermal impedance, GaAs MOSFETs.
  • Method 3105: Thermal resistance, bridge rectifier.
  • Method 3126: Thermal resistance (collector-cutoff-current).
  • Method 3131: Thermal impedance, BPT.
  • Method 3132: Thermal resistance (emitter).
  • Method 3136: Thermal resistance (collector to base).
  • Method 3141: Thermal response.
  • Method 3146: Thermal time constant.
  • Method 3151: Thermal resistance, general.
  • Method 3161: Thermal impedance, power MOSFETs.
  • Method 3181: Thermal resistance (thyristors).

Low Frequency Tests

  • Method 3201.1: Small-signal short-circuit input impedance.
  • Method 3206.1: Small-signal short-circuit forward-current transfer ratio.
  • Method 3211: Small-signal open-circuit reverse-voltage transfer ratio.
  • Method 3216: Small-signal open-circuit output admittance.
  • Method 3221: Small-signal short-circuit input admittance.
  • Method 3231: Small-signal short-circuit output admittance.
  • Method 3236: Open circuit output capacitance.
  • Method 3240.1: Input capacitance (output open-circuited or short-circuited).
  • Method 3241: Direct interterminal capacitance.
  • Method 3246.1: Noise figure.
  • Method 3251.1: Pulse response.
  • Method 3255: Large signal power gain.
  • Method 3256: Small signal power gain.
  • Method 3261.1: Extrapolated unity gain frequency.
  • Method 3266: Real part of small-signal short circuit input impedance.

High Frequency Tests

  • Method 3301: Small-signal short-circuit forward-current transfer-ratio cutoff frequency.
  • Method 3306.4: Small-signal short-circuit forward-current transfer ratio.
  • Method 3311: Maximum frequency of oscillation.
  • Method 3320: RF power output, RF power gain, and collector efficiency.

Electrical Characteristics Tests for MOS Field-effect Transistors

  • Method 3401.1: Breakdown voltage, gate to source.
  • Method 3402: Mosfet gate equivalent series resistance
  • Method 3403.1: Gate to source voltage or current.
  • Method 3404: MOSFET threshold voltage.
  • Method 3405.1: Drain to source on-state voltage.
  • Method 3407.1: Breakdown voltage, drain to source.
  • Method 3411.1: Gate reverse current.
  • Method 3413.1: Drain current.
  • Method 3415.1: Drain reverse current.
  • Method 3421.1: Static drain to source on-state resistance.
  • Method 3423: Small-signal, drain to source on state resistance.
  • Method 3431: Small-signal, common-source, short-circuit, input capacitance.
  • Method 3433: Small-signal, common-source, short-circuit, reverse-transfer capacitance.
  • Method 3453: Small-signal, common-source, short-circuit, output admittance.
  • Method 3455: Small-signal, common-source, short-circuit, forward transadmittance.
  • Method 3457: Small-signal, common-source, short-circuit, reverse transfer admittance.
  • Method 3459: Pulse response (FET).
  • Method 3461: Small-signal, common-source, short-circuit, input admittance.
  • Method 3469: Repetitive unclamped inductive switching.
  • Method 3470.2: Single pulse unclamped inductive switching.
  • Method 3471.2: Gate charge.
  • Method 3472.2: Switching time test.
  • Method 3473.1: Reverse recovery time (trr) and recovered charge (Qrr) for power MOSFET (drain-to-source) and power rectifiers with trr • 100 ns.
  • Method 3474.1: Safe operating area for power MOSFETs or insulated gate bipolar transistors.
  • Method 3475.1: Forward transconductance (pulsed dc method) of power MOSFETs or insulated gate bipolar transistors.
  • Method 3476: Commutating diode for safe operating area test procedure for measuring dv/dt during reverse recovery of power MOSFET transistors or insulated gate bipolar transistors.
  • Method 3477.1: Measurement of insulated gate bipolar transistor total switching losses and switching times.
  • Method 3478.1: Power transistor electrical dose rate test method.
  • Method 3479: Short circuit withstand time.
  • Method 3490: Clamped inductive switching safe operating area for MOS gated power transistors.

Electrical Characteristics Tests for Gallium Arsenide Transistors

  • Method 3501: Breakdown voltage, drain to source.
  • Method 3505: Maximum available gain of a GaAs FET.
  • Method 3510: 1 dB compression point of a GaAs FET.
  • Method 3570: GaAs FET forward gain (Mag S21).
  • Method 3575: Forward transconductance.

Electrical Characteristics Tests for Diodes

  • Method 4000: Condition for measurement of diode static parameters.
  • Method 4001.1: Capacitance.
  • Method 4011.4: Forward voltage.
  • Method 4016.4: Reverse current leakage.
  • Method 4021.2: Breakdown voltage (diodes).
  • Method 4022: Breakdown voltage (voltage regulators and voltage-reference diodes).
  • Method 4023.2: Scope display.
  • Method 4026.3: Forward recovery voltage and time.
  • Method 4031.4: Reverse recovery characteristics
  • Method 4036.1: “Q” for voltage variable capacitance diodes.
  • Method 4041.2: Rectification efficiency.
  • Method 4046.1: Reverse current, average.
  • Method 4051.3: Small-signal reverse breakdown impedance.
  • Method 4056.2: Small-signal forward impedance.
  • Method 4061.1: Stored charge.
  • Method 4064: Avalanche energy test for schottky diodes
  • Method 4065: Peak reverse power test
  • Method 4066.4: Surge current.
  • Method 4071.1: Temperature coefficient of breakdown voltage.
  • Method 4076.1: Saturation current.
  • Method 4081.3: Thermal resistance of lead mounted diodes (forward voltage, switching method).

Electrical Characteristics Tests for Microwave Diodes

  • Method 4101.3: Conversion loss.
  • Method 4102: Microwave diode capacitance.
  • Method 4106: Detector power efficiency.
  • Method 4111.1: Figure of merit (current sensitivity).
  • Method 4116.1: IF impedance.
  • Method 4121.2: Output noise ratio.
  • Method 4126.2: Overall noise figure and noise figure of the IF amplifier.
  • Method 4131.1: Video resistance
  • Method 4136.1: Standing wave ratio (SWR).
  • Method 4141.1: Burnout by repetitive pulsing.
  • Method 4146.1: Burnout by single pulse.
  • Method 4151: Rectified microwave diode current.

Electrical Characteristics Tests for Thyristors (Controlled Rectifiers)

  • Method 4201.2: Holding current.
  • Method 4206.1: Forward blocking current.
  • Method 4211.1: Reverse blocking current.
  • Method 4216: Pulse response.
  • Method 4219: Reverse gate current.
  • Method 4221.1: Gate-trigger voltage or gate-trigger current.
  • Method 4223: Gate-controlled turn-on time.
  • Method 4224: Circuit-commutated turn-off time.
  • Method 4225: Gate-controlled turn-off time.
  • Method 4226.1: Forward “on” voltage.
  • Method 4231.2: Exponential rate of voltage rise.

Electrical Characteristics Tests for Tunnel Diodes

  • Method 4301: Junction capacitance.
  • Method 4306.1: Static characteristics of tunnel diodes
  • Method 4316: Series inductance.
  • Method 4321: Negative resistance.
  • Method 4326: Series resistance.
  • Method 4331: Switching time.

MIL-STD-883G, Test Method Standard, Microcircuits

This standard establishes methods for testing microelectronic devices (i.e., monolithic, multichip, film and hybrid microcircuits, and microcircuit arrays) for use within Military/Aerospace electronic systems. It is intended to ensure a uniform level of quality and reliability suitable to the intended applications of those devices. The standard includes:

  • Basic environmental tests
  • Mechanical and electrical tests
  • Workmanship and training procedures

Environmental Tests

  • Method 1001: Barometric pressure, reduced (altitude operation).
  • Method 1002: Immersion.
  • Method 1003: Insulation resistance.
  • Method 1004.7: Moisture resistance.
  • Method 1005.8: Steady state life.
  • Method 1006: Intermittent life.
  • Method 1007: Agree life.
  • Method 1008.2: Stabilization bake.
  • Method 1009.8: Salt atmosphere (corrosion).
  • Method 1010.8: Temperature cycling.
  • Method 1011.9: Thermal shock.
  • Method 1012.1: Thermal characteristics.
  • Method 1013: Dew point.
  • Method 1014.12: Seal.
  • Method 1015.9: Burn-in test.
  • Method 1016.1: Life/reliability characterization tests.
  • Method 1017.2: Neutron irradiation.
  • Method 1018.5: Internal gas analysis.
  • Method 1019.7: Ionizing radiation (total dose) test procedure.
  • Method 1020.1: Dose rate induced latchup test procedure.
  • Method 1021.2: Dose rate upset testing of digital microcircuits.
  • Method 1022: Mosfet threshold voltage.
  • Method 1023.2: Dose rate response of linear microcircuits.
  • Method 1030.2: Preseal burn-in.
  • Method 1031: Thin film corrosion test.
  • Method 1032.1: Package induced soft error test procedure (due to alpha particles).
  • Method 1033: Endurance life test.
  • Method 1034.1: Die penetrant test (for plastic devices).

Mechanical Tests

  • Method 2001.2: Constant acceleration.
  • Method 2002.4: Mechanical shock.
  • Method 2003.8: Solderability.
  • Method 2004.5: Lead integrity.
  • Method 2005.2: Vibration fatigue.
  • Method 2006.1: Vibration noise.
  • Method 2007.3: Vibration, variable frequency.
  • Method 2008.1: Visual and mechanical.
  • Method 2009.9: External visual.
  • Method 2010.11: Internal visual (monolithic).
  • Method 2011.7: Bond strength (destructive bond pull test).
  • Method 2012.7: Radiography.
  • Method 2013.1: Internal visual inspection for DPA.
  • Method 2014: Internal visual and mechanical.
  • Method 2015.13: Resistance to solvents.
  • Method 2016: Physical dimensions.
  • Method 2017.8: Internal visual (hybrid).
  • Method 2018.4: Scanning electron microscope (SEM) inspection of metallization.
  • Method 2019.7: Die shear strength.
  • Method 2020.8: Particle impact noise detection test.
  • Method 2021.3: Glassivation layer integrity.
  • Method 2022.2: Wetting balance solderability.
  • Method 2023.5: Nondestructive bond pull.
  • Method 2024.2: Lid torque for glass-frit-sealed packages.
  • Method 2025.4: Adhesion of lead finish.
  • Method 2026: Random vibration.
  • Method 2027.2: Substrate attach strength.
  • Method 2028.4: Pin grid package destructive lead pull test.
  • Method 2029: Ceramic chip carrier bond strength.
  • Method 2030: Ultrasonic inspection of die attach.
  • Method 2031.1: Flip chip pull-off test.
  • Method 2032.2: Visual inspection of passive elements.
  • Method 2035: Ultrasonic inspection of TAB bonds.
  • Method 2036: Resistance to soldering heat.

Electrical Tests (Digital)

  • Method 3001.1: Drive source, dynamic.
  • Method 3002.1: Load conditions.
  • Method 3003.1: Delay measurements.
  • Method 3004.1: Transition time measurements.
  • Method 3005.1: Power supply current.
  • Method 3006.1: High level output voltage.
  • Method 3007.1: Low level output voltage.
  • Method 3008.1: Breakdown voltage, input or output.
  • Method 3009.1: Input current, low level.
  • Method 3010.1: Input current, high level.
  • Method 3011.1: Output short circuit current.
  • Method 3012.1: Terminal capacitance.
  • Method 3013.1: Noise margin measurements for digital microelectronic devices.
  • Method 3014: Functional testing.
  • Method 3015.7: Electrostatic discharge sensitivity classification.
  • Method 3016: Activation time verification.
  • Method 3017: Microelectronics package digital signal transmission.
  • Method 3018: Crosstalk measurements for digital microelectronic device packages.
  • Method 3019.1: Ground and power supply impedance measurements for digital microelectronics device packages.
  • Method 3020: High impedance (off-state) low-level output leakage current.
  • Method 3021: High impedance (off-state) high-level output leakage current.
  • Method 3022: Input clamp voltage.
  • Method 3023.1: Static latch-up measurements for digital CMOS microelectronic devices.
  • Method 3024: Simultaneous switching noise measurements for digital microelectronic devices.

Electrical Tests (Linear)

  • Method 4001.1: Input offset voltage and current and bias current.
  • Method 4002.1: Phase margin and slew rate measurements.
  • Method 4003.1: Common mode input voltage range/Common mode rejection ratio/Supply voltage rejection ratio.
  • Method 4004.1: Open loop performance.
  • Method 4005.1: Output performance.
  • Method 4006.1: Power gain and noise figure.
  • Method 4007: Automatic gain control range.

Quality Acceptance and Misc.

  • Method 5001: Parameter mean value control.
  • Method 5002.1: Parameter distribution control.
  • Method 5003: Failure analysis procedures for microcircuits.
  • Method 5004.11: Screening procedures.
  • Method 5005.14: Qualification and quality conformance procedures.
  • Method 5006: Limit testing.
  • Method 5007.6: Wafer lot acceptance.
  • Method 5008.9: Test procedures for hybrid and multichip microcircuits.
  • Method 5009.1: Destructive physical analysis.
  • Method 5010.4: Test procedures for custom monolithic microcircuits.
  • Method 5011.4: Evaluation and acceptance procedures for polymeric adhesives.
  • Method 5012.1: Fault coverage measurement for digital microcircuits.
  • Method 5013: Wafer fabrication control and wafer acceptance procedures for processed GaAs wafers.

MIL-STD-810F, Test Method Standard, Environmental Engineering Considerations and Laboratory Tests

The purpose of this standard is to help identify the conditions a specific product will experience in the field and establish test methods to replicate the effects of that environment.

  • Method 500.4: Low Pressure (Altitude).
  • Method 501.4: High Temperature.
  • Method 502.4: Low Temperature.
  • Method 503.4: Temperature Shock.
  • Method 504: Contamination By Fluids.
  • Method 505.4: Solar Radiation (Sunshine).
  • Method 506.4: Rain.
  • Method 507.4: Humidity.
  • Method 508.5: Fungus.
  • Method 509.4: Salt Fog.
  • Method 510.4: Sand And Dust.
  • Method 511.4: Explosive Atmosphere.
  • Method 512.4: Immersion.
  • Method 513.5: Acceleration.
  • Method 514.5: Vibration.
  • Method 515.5: Acoustic Noise.
  • Method 516.5: Shock.
  • Method 517: Pyroshock.
  • Method 518: Acidic Atmosphere.
  • Method 519.5: Gunfire Vibration.
  • Method 520.2: Temperature, Humidity, Vibration, and Altitude.
  • Method 521.2: Icing/Freezing Rain.
  • Method 522: Ballistic Shock.
  • Method 523.2: Vibro-Acoustic/Temperature.

For more information on DfR’s MIL Testing capabilities, call us at 301-464-0607, or send us an email.

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