Advancements in Reliability Prediction Simulations and Why They Matter

There has been steady progress over the years in the development of a Physics of Failure (PoF) understanding of the effects that various stress drivers have on semiconductor performance and wearout. 

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A Brief Overview of Failure Mechanism Models

The most prevalent and commonly simulated failure mechanisms in Si-based microelectronic devices are Electromigration (EM), Time Dependent Dielectric Breakdown (TDDB), Negative Bias Temperature Instability (NBTI) and Hot Carrier Injection (HCI).

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